STP16NS25FP datasheet(2/9 Pages) STMICROELECTRONICS

Teilenummer	STP16NS25FP

Bauteilbeschribung	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY??MOSFET

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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STP16NS25 - STP16NS25FP

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

TO-220

TO-220FP

°C/W

Rthj-case

Thermal Resistance Junction-case Max

0.9

3

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

16

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

600

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

250

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

23

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 8 A

0.23

0.28

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID =8 A

15

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1270

pF

Coss

Output Capacitance

190

pF

Crss

Reverse Transfer

Capacitance

74

pF

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