STP20NM50FD datasheet(2/9 Pages) STMICROELECTRONICS

Teilenummer	STP20NM50FD

Bauteilbeschribung	N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh??Power MOSFET with FAST DIODE

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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STP20NM50FD/STB20NM50FD-1

2/9

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

20

A

ID

Drain Current (continuous) at TC = 100°C

14

A

IDM ( )

Drain Current (pulsed)

80

A

PTOT

Total Dissipation at TC = 25°C

192

W

Derating Factor

1.2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

20

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

Rthj-case

Thermal Resistance Junction-case

Max

0.65

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

10

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =35 V)

700

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS =0

500

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±30V

±100

nA

VGS(th

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

34

5V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 10A

0.22

0.25

Ω

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