Datenblatt-Suchmaschine für elektronische Bauteile |
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TS2012 Datenblatt(PDF) 11 Page - STMicroelectronics |
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TS2012 Datenblatt(HTML) 11 Page - STMicroelectronics |
11 / 30 page TS2012 Electrical characteristics 11/30 Table 7. VCC = +2.5V, GND = 0V, Vic=1.25V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit ICC Supply current No input signal, no load, both channels 2.8 4 mA ISTBY Standby current No input signal, VSTBY = GND 0.2 2 µA Voo Output offset voltage Floating inputs, G = 6dB, RL = 8Ω 25 mV Po Output power THD + N = 1% max, f = 1kHz, RL = 4Ω THD + N = 1% max, f = 1kHz, RL = 8Ω THD + N = 10% max, f = 1kHz, RL = 4Ω THD + N = 10% max, f = 1kHz, RL = 8Ω 0.53 0.32 0.75 0.45 W THD + N Total harmonic distortion + noise Po = 0.2W, G = 6dB, f =1kHz, RL = 8Ω 0.04 % Efficiency Efficiency per channel Po = 0.53W, RL = 4Ω +15µH Po = 0.32W, RL = 8Ω+15µH 80 88 % PSRR Power supply rejection ratio with inputs grounded Cin=1µF (1),f = 217Hz, R L = 8Ω, Gain=6dB, Vripple = 200mVpp 70 dB Crosstalk Channel separation Po = 0.2W, G = 6dB, f =1kHz, RL = 8Ω 90 CMRR Common mode rejection ratio Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB, ΔVICM = 200mVpp 70 dB Gain Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 dB Zin Single ended input impedance All gains, refered to ground 24 30 36 k Ω FPWM Pulse width modulator base frequency 190 280 370 kHz SNR Signal to noise ratio (A-weighting) Po = 0.3W, G = 6dB, RL = 8Ω 93 dB tWU Wake-up time 1 3 ms tSTBY Standby time 1 ms |
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