Datenblatt-Suchmaschine für elektronische Bauteile |
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STP2NA50 Datenblatt(PDF) 2 Page - STMicroelectronics |
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STP2NA50 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA TO 220 IS OW ATT 220 Rthj-ca se Thermal Resistance Junction-case Max 1. 67 3.57 oC/W Rthj- amb Rthc- si nk Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Uni t IAR Avalanche Current , Repet itive or Not -Repetitive (pulse widt h limited by Tj max, δ <1%) 2.8 A EAS Single Pulse Avalanche Energy (starting Tj =25 oC, ID =IAR,VDD =50 V) 42 mJ EAR Repetit ive Avalanche Energy (pulse widt h limited by Tj max, δ <1%) 1.6 mJ IAR Avalanche Current , Repet itive or Not -Repetitive (Tc =100 oC, pulse width limited by Tj max, δ <1%) 1.8 A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it V(BR)DSS Drain-source Breakdown Volt age ID = 250 µAVGS = 0 500 V IDSS Zero Gat e Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating x0.8 Tc = 125 oC 250 1000 µA µA IGSS Gate-Source Leakage Current (VDS =0) VGS = ± 30 V 100 mA ON ( ∗) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VGS(th) Gate T hreshold Voltage VDS =VGS ID = 250 µA2.25 3 3.75 V RDS( on) St atic Drain-source On Resistance VGS =10 V ID =1. 4 A VGS =10 V ID =1.4 A Tc = 100 oC 3. 25 4 8 Ω Ω ID(o n) On Stat e Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 2. 8 A DYNAMIC Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on)max ID =1.4 A 0. 8 2 S Ciss Coss Crss Input Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS = 0 300 55 15 400 70 20 pF pF pF STP2NA50/FI 2/6 |
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