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STE30NK90Z Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STE30NK90Z
Bauteilbeschribung  N-channel 900V - 0.21廓 - 28A ISOTOP Zener-Protected SuperMESTM MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STE30NK90Z
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
900
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
900
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
28
A
ID
Drain current (continuous) at TC = 100°C
18
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
112
A
Ptot
Total dissipation at TC = 25°C
500
W
Derating Factor
4.3
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KW)
6.5
KV
dv/dt (2)
2.
ISD ≤28A, di/dt ≤200A/µs, VDD ≤V(BR)DSS,
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (AC-RMS) from all
four terminals to external heatsink
2500
V
Tstg
Storage temperature
-65 to 150
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
0.23
°C/W
Rthj-amb
Thermal resistance junction-ambient max
40
°C/W
Table 3.
Avalanche characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
13
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
500
mJ


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