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STP3N100 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STP3N100
Bauteilbeschribung  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3N100 Datenblatt(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
TO-220
ISOWATT220
Rthj-case
Thermal Resist ance Junct ion-case
Max
1.25
3. 12
oC/W
Rthj-amb
Rthc- sink
Tl
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
IAR
Avalanche Current
(repetit ive or not-repetitive, T j =25
oC)
3.5
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, ID =IAR,VDD =25 V)
130
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
6mJ
IAR
Avalanche Current
(repetit ive or not-repetitive, T j =100
oC)
2A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS = 0
1000
V
IDS S
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
25
250
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =250
µA2
3
4
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =10V
ID =1.5 A
5
Ω
Ω
ID(on)
On St ate Drain Current
VDS >ID(on) xRD S(on)max
VGS =10 V
3.5
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VDS >ID(on) xRD S(on)max
ID =1.5 A
1
1.8
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS =0
750
80
25
950
110
40
pF
pF
pF
STP3N100/FI
2/10


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