Datenblatt-Suchmaschine für elektronische Bauteile |
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STP4NA60 Datenblatt(PDF) 2 Page - STMicroelectronics |
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STP4NA60 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 10 page THERMAL DATA TO-220 ISOWATT220 Rthj-case Thermal Resist ance Junct ion-case Max 1.25 3. 12 oC/W Rthj-amb Rthc- sink Tl Thermal Resist ance Junct ion-ambient Max Thermal Resist ance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Uni t IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 4.3 A EAS Single Pulse Avalanche Energy (st arting Tj =25 oC, ID =IAR,VDD =50 V) 95 mJ EAR Repet itive Avalanche Energy (pulse width limited by Tj max, δ <1%) 4mJ IAR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 oC, pulse width limited by Tj max, δ <1%) 2.8 A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250 µAVGS = 0 600 V IDS S Zero Gate Volt age Drain Current (VGS =0) VDS =Max Rating VDS = Max Rating x 0.8 Tc =125 oC 25 250 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30 V ± 100 nA ON ( ∗) Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS ID =250 µA 2. 25 3 3. 75 V RDS(on) St atic Drain-source On Resist ance VGS =10V ID =2 A 1.85 2.2 Ω ID(on) On St ate Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 4.3 A DYNAMIC Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on)max ID =2 A 2.5 3.7 S Ciss Coss Crss I nput Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS =0 700 100 24 910 130 35 pF pF pF STP4NA60/FI 2/10 |
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