Datenblatt-Suchmaschine für elektronische Bauteile |
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STP4NB80 Datenblatt(PDF) 1 Page - STMicroelectronics |
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STP4NB80 Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 9 page STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 Ω - 4A - TO-220/TO-220FP PowerMESH ™ MOSFET s TYPICAL RDS(on) = 3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM September 2001 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NB80 STP4NB80FP VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 800 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 4 4(*) A ID Drain Current (continuous) at Tc = 100 oC 2.4 2.4(*) A IDM( •) Drain Current (pulsed) 16 16 A Ptot Total Dissipation at Tc = 25 o C 100 35 W Derating Factor 0.8 0.28 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns VISO Insulation Withstand Voltage (DC) 2500 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID STP4NB80 STP4NB80FP 800 V 800 V 3.3 Ω 3.3 Ω 4 A 4 A 1/9 |
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