TC3989

REV3_20070503

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 3

5.8 GHz 35.5 dBm Prematched FETs

FEATURES

• 35.5 dBm Typical Power at 5.8 GHz

• High Associated Gain: Ga = 8 dB Typical at 5.8 GHz

• High Linearity: IP3 = 46 dBm Typical at 5.8 Ghz

• High Power Added Efficiency: PAE ≥ 28 % for Class A Operation

• Suitable for High Reliability Application

• Lg = 0.6 µm, Wg = 12 mm

• 100 % DC and RF Tested

• Flange Ceramic Package

DESCRIPTION

The TC3989 is a 35.5 dBm partially prematched power FET assembled in a flange ceramic package. It

requires simple matching networks to achieve high gain and high linearity for 5.8 GHz applications. All

devices are 100 % DC and RF tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS at 25

°°°°C

* FET TO BE TESTED IN TRANSCOM FIXTURE.

PHOTO ENLARGEMENT

Symbol

Parameter

Rating

Drain-Source Voltage

12 V

Gate-Source Voltage

-5 V

Drain Current

3 A

Continuous Dissipation

12 W

Input Power, CW

33 dBm

Channel Temperature

175

°C

Storage Temperature

- 65

°C to +175 °C

Parameter

Conditions

MIN

TYP MAX UNIT

35

35.5

dBm

Ga*

7

8

dB

IP3

46

dBm

PAE

28

%

3

A

2000

mS

-1.7

Volts

18

22

Volts

2.5

°C/W