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STP6NS25 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STP6NS25
Bauteilbeschribung  N-CHANNEL 250V - 0.9ohm - 6A TO-220 MESH OVERLAY??MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6NS25 Datenblatt(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.79
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
75
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
250
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID =2 A
0.9
1.1
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID =2A
1
3.5
S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
355
pF
Coss
Output Capacitance
64
pF
Crss
Reverse Transfer
Capacitance
30
pF


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