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STB7NK80ZT4 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STB7NK80ZT4 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 13 page 3/13 STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 100µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 2.6 A 1.5 1.8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15V, ID = 2.6 A 5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS =0 1138 122 25 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 640V 50 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =400 V, ID = 2.6 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 20 12 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =640V, ID = 5.2 A, VGS =10V 40 7 21 56 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 400 V, ID = 2.6 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 45 22 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 640V, ID = 5.2 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 12 10 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 5.2 20.8 A A VSD (1) Forward On Voltage ISD = 5.2 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.2 A, di/dt = 100A/µs VDD =50V, Tj = 150°C (see test circuit, Figure 5) 530 3.31 12.5 ns µC A |
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