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STP80NF55L-06 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STP80NF55L-06
Bauteilbeschribung  N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
0.71
62.5
300
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
55
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA1
1.6
2. 5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V
ID =40 A
VGS =5 V
ID =40 A
0.005
0.0055
0.0065
0.008
Ω
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
80
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =18 A
20
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
7600
990
270
pF
pF
pF
STP80NF55L-06
2/8


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