Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

FDS4435BZ Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer FDS4435BZ
Bauteilbeschribung  P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS4435BZ Datenblatt(HTML) 1 Page - Fairchild Semiconductor

  FDS4435BZ_07 Datasheet HTML 1Page - Fairchild Semiconductor FDS4435BZ_07 Datasheet HTML 2Page - Fairchild Semiconductor FDS4435BZ_07 Datasheet HTML 3Page - Fairchild Semiconductor FDS4435BZ_07 Datasheet HTML 4Page - Fairchild Semiconductor FDS4435BZ_07 Datasheet HTML 5Page - Fairchild Semiconductor FDS4435BZ_07 Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
June 2007
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
www.fairchildsemi.com
1
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m
Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
General Description
This
P-Channel
MOSFET
is
produced
using
Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
-30
V
VGS
Gate to Source Voltage
±25
V
ID
Drain Current -Continuous
TA = 25°C
(Note 1a)
-8.8
A
-Pulsed
-50
PD
Power Dissipation
TA = 25°C
(Note 1a)
2.5
W
Power Dissipation
TA = 25°C
(Note 1b)
1.0
EAS
Single Pulse Avalanche Energy
(Note 4)
24
mJ
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJC
Thermal Resistance, Junction to Case
25
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS4435BZ
FDS4435BZ
SO-8
13’’
12mm
2500units
G
S
S
S
D
D
D
D
Pin 1
SO-8
8
1
G
S
S
S
D
D
D
D
5
6
7
3
2
4


Ähnliche Teilenummer - FDS4435BZ_07

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
FDS4435BZ-F085 ONSEMI-FDS4435BZ-F085 Datasheet
416Kb / 7P
   P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m
September-2017,Rev.1
logo
VBsemi Electronics Co.,...
FDS4435BZ-NL VBSEMI-FDS4435BZ-NL Datasheet
1,004Kb / 9P
   P-Channel 30-V (D-S) MOSFET
More results

Ähnliche Beschreibung - FDS4435BZ_07

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
FDS4435BZ-F085 ONSEMI-FDS4435BZ-F085 Datasheet
416Kb / 7P
   P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m
September-2017,Rev.1
FDS6673BZ-F085 ONSEMI-FDS6673BZ-F085 Datasheet
510Kb / 6P
   P-Channel PowerTrench짰 MOSFET -30V, -14.5A, 7.8m廓
September-2017, Rev. 2
logo
Fairchild Semiconductor
FDS8858CZ FAIRCHILD-FDS8858CZ Datasheet
311Kb / 10P
   Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 30V, 8.6A, 17.0m廓 P-Channel: -30V, -7.3A, 20.5m廓
logo
ON Semiconductor
FDS8858CZ ONSEMI-FDS8858CZ Datasheet
543Kb / 11P
   Dual N & P-Channel PowerTrench짰 MOSFETN-Channel: 30V, 8.6A, 17.0m廓 P-Channel: -30V, -7.3A, 20.5m廓
October-2017,Rev.3
logo
Fairchild Semiconductor
FDB8160 FAIRCHILD-FDB8160 Datasheet
329Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 80A, 1.8m廓
FDD8896 FAIRCHILD-FDD8896_12 Datasheet
1Mb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 94A, 5.7m廓
FDD8880 FAIRCHILD-FDD8880_08 Datasheet
503Kb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓
logo
ON Semiconductor
FDS8984-F085 ONSEMI-FDS8984-F085 Datasheet
485Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 7A, 23m廓
September-2017, Rev. 1
logo
Fairchild Semiconductor
FDMS8662 FAIRCHILD-FDMS8662 Datasheet
210Kb / 7P
   N-Channel PowerTrench짰 MOSFET 30V, 49A, 2.0m廓
FDD8870_F085 FAIRCHILD-FDD8870_F085_13 Datasheet
319Kb / 11P
   N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
More results


Html Pages

1 2 3 4 5 6


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com