Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS6690AS Datenblatt(PDF) 6 Page - Fairchild Semiconductor |
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FDS6690AS Datenblatt(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDS6690AS Rev A2(X) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6690AS. Figure 12. FDS6690AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A). Figure 13. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 oC TA = 25 oC TA = 100 oC Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV 10nS/DIV 0V |
Ähnliche Teilenummer - FDS6690AS_08 |
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Ähnliche Beschreibung - FDS6690AS_08 |
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