STP9NB50 datasheet(1/9 Pages) STMICROELECTRONICS

Teilenummer	STP9NB50

Bauteilbeschribung	N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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May 2000

STP9NB50

STP9NB50FP

N-CHANNEL 500V - 0.75

Ω - 8.6 A TO-220/TO-220FP

PowerMesh

™ MOSFET

s

TYPICAL RDS(on) = 0.75 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

(

•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP9NB50

500 V

< 0.85

Ω

8.6 A

STP9NB50FP

500 V

< 0.85

Ω

4.9 A

Symbol

Parameter

Value

Unit

STP9NB50

STP9NB50FP

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain-gate Voltage (RGS =20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC =25°C

8.6

4.9

A

ID

Drain Current (continuos) at TC = 100°C

5.4

3.1

A

IDM (q)

Drain Current (pulsed)

34.4

A

PTOT

Total Dissipation at TC =25°C

125

40

W

Derating Factor

1

0.32

W/

°C

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD<9A, di/dt<200A/µ,VDD<V(BR)DSS,TJ<TJMAX

INTERNAL SCHEMATIC DIAGRAM

1

2

3

1

2

3

TO-220

TO-220FP

Ähnliche Beschreibung - STP9NB50

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