Datenblatt-Suchmaschine für elektronische Bauteile |
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STPR620CF Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPR620CF Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 6 page Symbol Test Conditions Min. Typ. Max. Unit IR * Tj =25 °CVR =VRRM 50 µA Tj = 100 °C0.6 mA VF** Tj = 125 °CIF = 3 A 0.99 V Tj = 125 °CIF = 6 A 1.20 Tj =25 °CIF = 6 A 1.25 Pulse test : * tp = 5 ms, δ <2 % ** tp = 380 µs, δ <2 % ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr Tj =25 °CIF = 0.5A IR =1A Irr = 0.25A 30 ns tfr Tj =25 °CIF =1A VFR = 1.1 x VF tr = 10 ns 20 ns VFP Tj =25 °CIF = 1A tr = 10 ns 3 V To evaluate the conduction losses use the following equation : P = 0.78 x IF(AV) + 0.070 x IF 2 (RMS) RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case TO220AB Per diode 6.5 °C/W ISOWATT220AB Per diode 8.5 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES Fig. 2: Peak current versus form factor.(Per diode) Fig. 1: Average forward power dissipation versus aver- age forward current (Per diode). STPR620CT/STPR620CF 2/6 |
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