Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS6679AZ Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDS6679AZ Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS6679AZ Rev. B1 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -20 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS=0V ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.9 -3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 6.5 mV/°C rDS(on) Drain to Source On Resistance VGS = -10V, ID = -13A 7.7 9.3 m Ω VGS = -4.5V, ID = -11A 11.8 14.8 VGS = -10V, ID = -13A, TJ = 125°C 10.7 13.4 gFS Forward Transconductance VDS = -5V, ID = -13A 55 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1MHz 2890 3845 pF Coss Output Capacitance 500 665 pF Crss Reverse Transfer Capacitance 495 745 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time VDD = -15V, ID = -1A VGS = -10V, RGS = 6Ω 13 24 ns tr Rise Time 15 27 ns td(off) Turn-Off Delay Time 210 336 ns tf Fall Time 92 148 ns Qg Total Gate Charge VDS = -15V, VGS = -10V, ID = -13A 68 96 nC Qg Total Gate Charge VDS = -15V, VGS = -5V, ID = -13A 38 54 nC Qgs Gate to Source Gate Charge 10 nC Qgd Gate to Drain Charge 17 nC Drain-Source Diode Characteristic VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V trr Reverse Recovery Time IF = -13A, di/dt = 100A/µs 40 ns Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/µs -31 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300 µs, Duty Cycle <2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b)105°C/W when mounted on a .04 in2 pad of 2 oz copper minimun pad c) 125°C/W when mounted on a |
Ähnliche Teilenummer - FDS6679AZ_08 |
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Ähnliche Beschreibung - FDS6679AZ_08 |
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