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STPS10L45CT Datenblatt(PDF) 4 Page - STMicroelectronics |
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STPS10L45CT Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 7 page STPS10L45CT/CG/CF/CFP 4/7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10.0 100.0 IFM(A) VFM(V) Tj=25°C Tj=150°C Typical values Tj=125°C Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). 0 4 8 12 16 20 24 28 32 36 40 0 10 20 30 40 50 60 70 80 S(Cu) (cm²) Rth(j-a) (°C/W) Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)( D 2PAK). 0 5 10 15 20 25 30 35 40 45 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 VR(V) IR(mA) Tj=100°C Tj=25°C Tj=150°C Tj=125°C Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 12 5 10 20 50 10 100 1000 VR(V) C(pF) F=1MHz Tj=25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). |
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