Datenblatt-Suchmaschine für elektronische Bauteile |
|
STPS160H100TV Datenblatt(PDF) 3 Page - STMicroelectronics |
|
STPS160H100TV Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 5 page STPS160H100TV 3/5 1E-3 1E-2 1E-1 1E+0 0 100 200 300 400 500 600 t(s) IM(A) Tc=50°C Tc=90°C IM t δ=0.5 Fig. 5: Non repetitive surge peak forward current ver- sus overload duration (maximum values, per diode). 1E-3 1E-2 1E-1 1E+0 5E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) Single pulse δ = 0.1 δ = 0.2 δ = 0.5 T δ=tp/T tp Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM Fig. 4: Normalized avalanche power derating versus junction temperature. 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM Fig. 3: Normalized avalanche power derating versus pulse duration. 0 20 40 60 80 100 0 10 20 30 40 50 60 70 80 IF(av) (A) PF(av)(W) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 20 40 60 80 100 Tamb(°C) IF(av)(A) Rth(j-a)=2°C/W Rth(j-a)=Rth(j-c) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ=0.5, per diode). |
Ähnliche Teilenummer - STPS160H100TV |
|
Ähnliche Beschreibung - STPS160H100TV |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |