Datenblatt-Suchmaschine für elektronische Bauteile |
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STU3N62K3 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STU3N62K3 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 19 page STB/D/F/P/U3N62K3 Electrical characteristics 5/19 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 2.7 10.8 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 2.7 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.7 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) 190 825 9 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) 255 1100 10 ns nC A Table 9. Gate-source Zener diode Symbol Parameter Test conditions Min Typ Max Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 V |
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