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STP7N52K3 Datenblatt(PDF) 4 Page - STMicroelectronics |
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STP7N52K3 Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 4/15 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 525 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static drain-source on resistance VGS = 10 V, ID = 3.1 A 0.84 0.98 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 3.1 A TBD S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 TBD TBD TBD pF pF pF COSS eq (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 420 V TBD pF RG Intrinsic gate resistance f = 1 MHz open drain TBD Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 6.3 A, VGS = 10 V (see Figure 3) TBD TBD TBD nC nC nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 262 V, ID = 3.1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2) TBD TBD TBD TBD ns ns ns ns |
Ähnliche Teilenummer - STP7N52K3 |
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Ähnliche Beschreibung - STP7N52K3 |
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