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STP7N52K3 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STP7N52K3
Bauteilbeschribung  N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3
4/15
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
525
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 3.1 A
0.84
0.98
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 3.1 A
TBD
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
TBD
TBD
TBD
pF
pF
pF
COSS eq
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 420 V
TBD
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
TBD
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 6.3 A,
VGS = 10 V
(see
Figure 3)
TBD
TBD
TBD
nC
nC
nC
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 262 V, ID = 3.1 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 2)
TBD
TBD
TBD
TBD
ns
ns
ns
ns


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