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STB8NM60T4 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STB8NM60T4
Bauteilbeschribung  N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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Electrical ratings
STP8NM60, STD5NM60, STB8NM60
2/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
D²PAK
TO-220FP
IPAK
DPAK
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
8
8(1)
1.
Limited only by maximum temperature allowed
5A
ID
Drain current (continuous) at TC=100 °C
5
5 (1)
3.1 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
32
32 (1)
20 (1)
A
PTOT
Total dissipation at TC = 25 °C
100
30
96
W
Derating factor
0.8
0.24
0.0.4
W/°C
dv/dt(3)
3.
ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80%V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
--
2500
--
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
TO-220
D²PAK
IPAK
DPAK
TO-220FP
Rthj-case
Thermal resistance junction-case max
1.25
1.3
4.16
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAS, VDD=50 V)
200
mJ


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