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STB21NM60N Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STB21NM60N
Bauteilbeschribung  N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical ratings
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/D2PAK
I2PAK / TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
17
17(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
10
10(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
68
68(1)
A
PTOT
Total dissipation at TC = 25 °C
140
30
W
dv/dt(3)
3.
ISD ≤ 17 A, di/dt ≤ 480 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC = 25 °C)
--
2500
V
Tstg
Storage temperature
–55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
TO-220
D²PAK I²PAK
TO-220FP TO-247
Unit
Rthj-case
Thermal resistance junction-
case max
0.89
4.21
0.89
°C/W
Rthj-pcb
Thermal resistance junction-
pcb max
--
30
--
--
--
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
62.5
--
62.5
50
°C/W
Tl
Maximum lead temperature
for soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
8.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
610
mJ


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