STP20NM50FD datasheet(5/16 Pages) STMICROELECTRONICS

Teilenummer	STP20NM50FD

Bauteilbeschribung	N-channel 500 V, 0.22 廓, 20 A D2PAK, TO-220FP, TO-220 FDmesh??Power MOSFET

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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5 / 16 page

STB20NM50FD - STF20NM50FD - STP20NM50FD

Electrical characteristics

5/16

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 250 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

22

20

ns

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

VDD = 400 V, ID = 20 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

6

15

30

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

20

80

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 20 A, VGS=0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =20 A, di/dt =100 A/µs,

VDD = 60 V, TJ=150 °C

(see Figure 17)

245

2

16

ns

nC

A

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