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STF23NM60N Datenblatt(PDF) 6 Page - STMicroelectronics

Teilenummer STF23NM60N
Bauteilbeschribung  N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF23NM60N Datenblatt(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
6/19
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 9.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
25
15
90
36
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
19
76
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 19 A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =19 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 20)
470
7
29
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 19 A
Tj = 150 °C (see Figure 20)
600
9
29
ns
µC
A


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