STF23NM60N datasheet(3/19 Pages) STMICROELECTRONICS

Teilenummer	STF23NM60N

Bauteilbeschribung	N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET

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STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N

Electrical ratings

3/19

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK/I²PAK

TO-220/TO-247

TO-220FP

VDS

Drain-source voltage (VGS=0)

600

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

19

19 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

11.7

11.7 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

76

76 (1)

A

PTOT

Total dissipation at TC = 25 °C

150

35

W

dv/dt (3)

3.

ISD ≤ 19 A, di/dt ≤400 A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

--

2500

V

Tstg

Storage temperature

-55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220

I²PAK

TO-247

D²PAK

TO-220FP

Unit

Rthj-case

Thermal resistance

junction-case max

0.83

3.6

°C/W

Rthj-amb

Thermal resistance

junction-amb max

62.5

50

--

62.5

°C/W

Rthj-pcb

Thermal resistance

junction-pcb max

--

30

--

°C/W

Tl

Maximum lead

temperature for

soldering purposes

300

°C

Ähnliche Beschreibung - STF23NM60N

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	STW24NM65N	552Kb / 19P	N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET
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	STP25NM60N	523Kb / 18P	N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
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