STP25NM50N datasheet(4/18 Pages) STMICROELECTRONICS

Teilenummer	STP25NM50N

Bauteilbeschribung	N-channel 500V - 0.11廓 - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET

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Electrical characteristics

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N

4/18

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS = 0

500

V

dv/dt (1)

1.

Characteristic value at turn off on inductive load

Drain source voltage slope

Vdd=400V, Id=25A, Vgs=10V

44

V/ns

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, @125°C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 11A

0.110 0.140

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward transconductance

VDS=15V, ID =11A

19

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

2565

511

77

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0V, VDS = 0V to 400V

315

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400V, ID =22A,

VGS = 10V,

(see Figure 18)

84

11

35

nC

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20mV

open drain

1.6

Ω

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