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STP25NM50N Datenblatt(PDF) 4 Page - STMicroelectronics |
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STP25NM50N Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS = 0 500 V dv/dt (1) 1. Characteristic value at turn off on inductive load Drain source voltage slope Vdd=400V, Id=25A, Vgs=10V 44 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 11A 0.110 0.140 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward transconductance VDS=15V, ID =11A 19 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 2565 511 77 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent output capacitance VGS = 0V, VDS = 0V to 400V 315 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400V, ID =22A, VGS = 10V, (see Figure 18) 84 11 35 nC nC nC Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20mV open drain 1.6 Ω |
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