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2SJ550L-E Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer 2SJ550L-E
Bauteilbeschribung  Silicon P Channel MOS FET
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ550L-E Datenblatt(HTML) 3 Page - Renesas Technology Corp

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2SJ550(L), 2SJ550(S)
Rev.3.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0–2
–4
–6
–8
–10
–20
0
–4
–8
–12
–16
0
–1–2–3–4–5
Tc = 75°C
80
0
20
40
60
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–6 V
–4 V
–3.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
10
100
30
300
3
0.3
1
0.1
0.1
0.3
1
3
10
30
100
1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
µs
100
µs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
0
–0.8
–1.6
–2.4
–3.2
0
–4
–8
–12
–16
–20
Pulse Test
ID = –15 A
–10 A
–5 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.3
0.03
0.1
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
10
3
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C


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