2SK1168-E datasheet(4/7 Pages) RENESAS

Teilenummer	2SK1168-E

Bauteilbeschribung	Silicon N Channel MOS FET

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Hersteller	RENESAS [Renesas Technology Corp]

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4 / 7 page

2SK1167, 2SK1168

Rev.2.00 Sep 07, 2005 page 4 of 6

1.0

0.8

0.6

0.4

0.2

0

40

80

120

160

Case Temperature TC (

°C)

–40

Static Drain to Source on State

Resistance vs. Temperature

VGS = 10 V

Pulse Test

10 A

ID = 20 A

5 A

Forward Transfer Admittance vs. Drain Current

50

20

10

5

0.5

0.2

0.5

1.0

5

10

20

Drain Current ID (A)

1.0

2

75

°C

–25

°C

TC = 25°C

VDS = 20 V

Pulse Test

Body to Drain Diode Reverse

Recovery Time

di/dt = 100 A/

µs, Ta = 25°C

VGS = 0

Pulse Test

Reverse Drain Current IDR (A)

5,000

2,000

500

200

100

50

1,000

0.2

0.5

1.0

2

5

10

20

Typical Capacitance

vs. Drain to Source Voltage

100

010

20

30

40

50

Drain to Source Voltage VDS (V)

Coss

Ciss

Crss

10

VGS = 0

f = 1 MHz

1,000

10,000

Dynamic Input Characteristics

500

400

300

200

100

0

20

40

60

80

100

Gate Charge Qg (nc)

20

16

12

8

4

0

VDD = 100 V

VDD = 400 V

250 V

VDS

ID = 15 A

400 V

VGS

100 V

Switching Characteristics

1,000

200

100

50

20

10

500

0.5

1.0

2

5

10

20

50

Drain Current ID (A)

VGS = 10 V, VDD 30 V

PW = 2

µs, duty < 1%

td (off)

tr

tf

td (on)

Ähnliche Beschreibung - 2SK1168-E

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