Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1314L Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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2SK1314L Datenblatt(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S) Rev.2.00 Sep 07, 2005 page 4 of 7 5 40 160 Case Temperature TC (°C) 4 1 0 80 120 0 2 3 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 1 A ID = 5 A –40 2 A 10 0.2 5 Drain Current ID (A) 5 0.5 0.1 0.5 2 0.1 1.0 2 Forward Transfer Admittance vs. Drain Current –25 °C VDS = 20 V Pulse Test 0.05 0.2 1.0 TC = 25°C 75 °C 5,000 0.5 Reverse Drain Current IDR (A) 2,000 200 0.2 1.0 10 50 500 1,000 Body to Drain Diode Reverse Recovery Time 0.1 100 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 2 1,000 20 50 Drain to Source Voltage VDS (V) 10 10 30 40 1 100 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 0 Ciss Coss Crss 500 16 40 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 824 32 0 200 300 VDS 100 V 20 16 4 0 8 12 VDD = 100 V 250 V 400 V ID = 5 A 250 V VDD = 400 V VGS 0.5 10 Drain Current ID (A) 500 50 0.2 1.0 5 10 100 200 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 0.1 20 2 Switching Characteristics tf 5 td (on) tr td (off) • • |
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