Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1329-E Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SK1329-E Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK1328, 2SK1329 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 2SK1328 450 Drain to source voltage 2SK1329 VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 12 A Drain peak current ID(pulse)* 1 48 A Body to drain diode reverse drain current IDR 12 A Channel dissipation Pch* 2 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions 2SK1328 450 Drain to source breakdown voltage 2SK1329 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 2SK1328 VDS = 360 V, VGS = 0 Zero gate voltage drain current 2SK1329 IDSS — — 250 µA VDS = 400 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V 2SK1328 — 0.40 0.55 Static drain to source on state resistance 2SK1329 RDS(on) — 0.45 0.60 Ω ID = 6 A, VGS = 10 V * 3 Forward transfer admittance |yfs| 6.0 10 — S ID = 6 A, VDS = 10 V * 3 Input capacitance Ciss — 1450 — pF Output capacitance Coss — 410 — pF Reverse transfer capacitance Crss — 55 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 20 — ns Rise time tr — 70 — ns Turn-off delay time td(off) — 120 — ns Fall time tf — 60 — ns ID = 6 A, VGS = 10 V, RL = 5 Ω Body to drain diode forward voltage VDF — 1.0 — V IF = 12 A, VGS = 0 Body to drain diode reverse recovery time trr — 450 — ns IF = 12 A, VGS = 0, diF/dt = 100 A/ µs Note: 3. Pulse test |
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Ähnliche Beschreibung - 2SK1329-E |
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