Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1526 Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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2SK1526 Datenblatt(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1526, 2SK1527 Rev.2.00 Sep 07, 2005 page 4 of 6 0.5 40 160 Case Temperature TC (°C) 0.4 0.1 0 80 120 0 0.2 0.3 Static Drain to Source on State Resistance vs. Temperature ID = 50 A VGS = 10 V Pulse Test –40 20 A 10 A 100 150 Drain Current ID (A) 50 5 0.5 2 10 1 10 20 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 2 520 75 °C 25 °C TC = –25°C 2,000 10 Reverse Drain Current IDR (A) 1,000 100 1 200 500 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, V GS = 0 Pulse Test 50 220 50 5 5,000 100 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 1,000 160 400 Gate Charge Qg (nc) 800 80 240 0320 600 400 200 ID = 30 A VDD = 400 V VDS Dynamic Input Characteristics 250 V 100 V VGS 20 16 12 8 4 0 0 VDD = 100 V 250 V 400 V 1,000 250 Drain Current ID (A) 500 50 15 20 10 100 200 0.5 20 10 Switching Characteristics tf td (off) tr td (on) VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % |
Ähnliche Teilenummer - 2SK1526 |
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Ähnliche Beschreibung - 2SK1526 |
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