Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS80L30CY Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPS80L30CY Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 3 page Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 0.7 °C/W Total 0.5 Rth (c) Coupling 0.3 THERMAL RESISTANCES Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR =VRRM 4mA Tj = 125 °C 0.7 1.5 A VF * Forward voltage drop Tj = 25 °CIF = 40 A 0.48 V Tj = 125 °CIF = 40 A 0.34 0.38 Tj = 25 °CIF = 80 A 0.58 Tj = 125 °CIF = 80 A 0.48 0.53 Pulse test : * tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.0037 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STPS80L30CY 2/3 |
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