Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1620 Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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2SK1620 Datenblatt(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK1620(L), 2SK1620(S) Rev.2.00 Sep 07, 2005 page 4 of 7 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 2 A 5 A 10 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 0.5 0.2 0.5 1.0 5 10 20 1.0 2 2 Drain Current ID (A) –25 °C Ta = 25 °C 75 °C VGS = 10 V Pulse Test Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) 500 200 50 20 10 5 100 0.5 1.0 2 5 10 20 50 di/dt = 50 A/ µs VGS = 0 Ta = 25 °C Pulse Test Typical Capacitance vs. Drain to Source Voltage 10,000 1,000 100 10 010 20 30 40 50 Drain to Source Voltage VDS (V) Crss VGS = 0 f = 1 MHz Coss Ciss Dynamic Input Characteristics 200 160 120 80 40 0 816 24 32 40 Gate Charge Qg (nc) 20 16 12 8 4 0 25 V VDD = 100 V VDS ID = 10 A VGS 50 V VDD = 100 V 25 V 50 V 50 V Switching Characteristics 500 100 50 20 10 5 200 0.2 0.5 1.0 2 5 20 Drain Current ID (A) td(on) 10 td(off) tr VGS = 10 V, VDD = 30 V PW = 2 µs, duty 1 % tf < • • |
Ähnliche Teilenummer - 2SK1620 |
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Ähnliche Beschreibung - 2SK1620 |
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