Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1629-E Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SK1629-E Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK1628, 2SK1629 Rev.3.00 May 15, 2006 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 2SK1628 450 Drain to source voltage 2SK1629 VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 30 A Drain peak current ID(pulse)* 1 120 A Body to drain diode reverse drain current IDR 30 A Channel dissipation Pch* 2 200 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions 2SK1628 450 Drain to source breakdown voltage 2SK1629 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 2SK1628 VDS = 360 V, VGS = 0 Zero gate voltage drain current 2SK1629 IDSS — — 250 µA VDS = 400 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V 2SK1628 — 0.20 0.25 Static drain to source on state resistance 2SK1629 RDS(on) — 0.22 0.27 Ω ID = 15 A, VGS = 10 V * 3 Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V * 3 Input capacitance Ciss — 2800 — pF Output capacitance Coss — 780 — pF Reverse transfer capacitance Crss — 90 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 32 — ns Rise time tr — 140 — ns Turn-off delay time td(off) — 200 — ns Fall time tf — 100 — ns ID = 15 A, VGS = 10 V, RL = 2 Ω Body to drain diode forward voltage VDF — 1.1 — V IF = 30 A, VGS = 0 Body to drain diode reverse recovery time trr — 600 — ns IF = 30 A, VGS = 0, diF/dt = 100 A/ µs Note: 3. Pulse test |
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Ähnliche Beschreibung - 2SK1629-E |
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