2SK1880L datasheet(5/8 Pages) RENESAS

Teilenummer	2SK1880L

Bauteilbeschribung	Silicon N Channel MOS FET

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Hersteller	RENESAS [Renesas Technology Corp]

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5 / 8 page

2SK1880(L), 2SK1880(S)

Rev.2.00 Sep 07, 2005 page 5 of 7

Source to Drain Voltage VSD (V)

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

2.0

1.6

1.2

0.8

0.4

0.8

1.2

1.6

2.0

GS

Pulse Test

V

= 10 V

0 V, –5 V

0

10

100

1 m

10 m

100 m

10

0.01

0.03

0.1

0.3

1.0

3

µ

D = 1

0.5

0.2

0.1

0.05

0.02

1 shot

Pulse

Tc = 25

°C

0.01

1

θ ch – c(t) = s(t)

ch – c

ch – c = 6.25

°C / W. Tc = 25°C

P

D =

PW

T

PW

T

DM

γ

•

θ

Reverse Drain Current vs.

Source to Drain Voltage

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