2SK2212-E datasheet(5/7 Pages) RENESAS

Teilenummer	2SK2212-E

Bauteilbeschribung	Silicon N Channel MOS FET

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Hersteller	RENESAS [Renesas Technology Corp]

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5 / 7 page

2SK2212

Rev.2.00 Sep 07, 2005 page 5 of 6

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width

Switching Time Test Circuit

Waveforms

20

16

12

8

4

0

0.4

0.8

1.2

1.6

2.0

Pulse Test

VGS = 0, –5 V

10 V

5 V

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) •

ch – c

ch – c = 4.17

°C/W, Tc = 25°C

θ

γ

θ

Tc = 25

°C

3

1

0.3

0.1

0.03

0.01

10 µ

100 µ

1 m

10 m

100 m

1

10

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

Vin Monitor

D.U.T.

Vin

10 V

RL

VDD

= 30 V

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout

Monitor

50

Ω

90%

10%

tf

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2SK2212-E Datenblatt(PDF) 5 Page - Renesas Technology Corp

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