Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2586-E Datenblatt(PDF) 5 Page - Renesas Technology Corp |
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2SK2586-E Datenblatt(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page 2SK2586 Rev.5.00 Sep 07, 2005 page 5 of 7 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Pulse Test Reverse Drain Current vs. Source to Drain Voltage VGS = 0, –5 V 10 V 5 V 200 160 120 80 40 Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 25 50 75 100 125 150 0 IAP = 45 A VDD = 25 V duty < 0.1 % Rg > 50 Ω Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width D. U. T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin 15 V 0 ID VDS IAP V(BR)DSS L VDD EAR = • L • IAP2• 2 1 VDSS VDSS – VDD Avalanche Test Circuit and Waveform 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 PDM PW T D = PW T θch – c(t) = γs (t) • θch – c θch – c = 1.0°C/W, Tc = 25°C Tc = 25 °C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pul se |
Ähnliche Teilenummer - 2SK2586-E |
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Ähnliche Beschreibung - 2SK2586-E |
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