REJ03G0207-0400 Rev.4.00 Nov 08, 2007

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2SK2596

Silicon N-Channel MOS FET

UHF Power Amplifier

REJ03G0207-0400

Rev.4.00

Nov 08, 2007

Features

• High power output, High gain, High efficiency

PG = 12.2 dB, Pout = 1.05 W,

ηD = 45%min. (f = 836.5 MHz)

• Compact package capable of surface mounting

Outline

RENESAS package code: PLZZ0004CA-A

1

2

3

4

1. Gate

2. Source

3. Drain

4. Source

3

1

2, 4

Note:

Marking is “BX”.

*UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

17

V

Gate to source voltage

±10

V

Drain current

0.4

A

Drain peak current

Note1

1

A

Channel dissipation

Pch

Note2

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–45 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.