Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2931-E Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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2SK2931-E Datenblatt(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2931 Rev.5.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 40 32 24 16 8 –40 0 40 80 120 160 0 VGS = 4 V 10 V 5, 10, 20 A 0.1 0.3 1 3 10 30 100 500 100 200 20 50 10 2 5 1 0.5 25 °C Tc = –25 °C 75 °C Pulse Test VDS = 10 V Pulse Test ID = 20 A 10 A 5 A 0.1 0.3 1 3 10 30 100 010 20 30 40 50 10000 2000 5000 1000 100 200 500 100 80 60 40 20 0 20 16 12 8 4 40 80 120 160 200 0 0.1 0.2 1 2 10 20 100 ID = 45 A VGS VDS VDD = 50 V 25 V 10 V 100 20 50 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 50 VGS = 0 f = 1 MHz Ciss Coss Crss VDD = 10 V 25 V 50 V 1000 200 500 100 20 10 50 0.5 5 50 VGS = 10 V, VDD = 30 V PW = 10 µs, duty < 1 % tf tr td(on) td(off) |
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Ähnliche Beschreibung - 2SK2931-E |
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