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2SJ77 Datenblatt(Datasheet) 2 Page - Renesas Technology Corp

Teile-Nr. 2SJ77
Beschreibung  Silicon P Channel MOS FET
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Hersteller  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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2SJ76, 2SJ77, 2SJ78, 2SJ79
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
2SJ76
–140
2SJ77
–160
2SJ78
–180
Drain to source voltage
2SJ79
VDSX
–200
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–500
mA
Body to drain diode reverse drain current
IDR
–500
mA
Pch
1.75
W
Channel dissipation
Pch
Note 1
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
2SJ76
–140
V
2SJ77
–160
V
2SJ78
–180
V
Drain to source breakdown
voltage
2SJ79
V (BR) DSX
–200
V
VGS = 2 V, ID = –1 mA
Gate to source breakdown voltage
V (BR) GSS
±15
V
IG =
±10 µA, VDS = 0
Gate to source cutoff voltage
VGS (on)
–0.2
–1.5
V
ID = –10 mA, VDS = –10 V
Note 2
Drain to source saturation voltage
VDS (sat)
–2.0
V
ID = –10 mA, VGS = 0
Note 2
Forward transfer admittance
|yfs|
20
35
mS
ID = –10 mA, VDS = –20 V
Note 2
Input capacitance
Ciss
120
pF
Reverse transfer capacitance
Crss
4.8
pF
VDS = –10 V, ID = –10 mA,
f = 1 MHz
Note:
2. Pulse test




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