Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ244JYTR-E Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SJ244JYTR-E Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SJ244 Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –12 V Gate to source voltage VGSS ±7 V Drain current ID ±2 A Drain peak current ID (pulse) Note 1 ±4 A Channel dissipation Pch Note 2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –12 — — V ID = –1 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±7 — — V IG = ±10 µA, VDS = 0 Gate to source leak current IGSS — — ±5 µA VGS = ±6 V, VDS = 0 Zero gate voltage drain current IDSS — — –1 µA VDS = –8 V, VGS = 0 Gate to source cutoff voltage VGS (off) –0.4 — –1.4 V ID = –100 µA, VDS = –5 V RDS (on) 1 — 0.65 0.9 Ω ID = –0.5 A, VGS = –2.5 V Note 3 Static drain to source on state resistance RDS (on) 2 — 0.5 — Ω ID = –1 A, VGS = –4 V Note 3 Forward transfer admittance |yfs| — 1.8 — S ID = –1 A, VDS = –5 V Note 3 Input capacitance Ciss — 100 — pF Output capacitance Coss — 168 — pF Reverse transfer capacitance Crss — 35 — pF VDS = –5 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 365 — ns Turn-off delay time td (off) — 1450 — ns ID = –0.2 A Note 3 Vin = –4 V, RL = 51 Ω Body to drain diode forward voltage VDF — — 7 V IF = 4 A Note 3, V GS = 0 Note: 3. Pulse test |
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