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2SJ319STL-E Datenblatt(PDF) 4 Page - Renesas Technology Corp

Teilenummer 2SJ319STL-E
Bauteilbeschribung  Silicon P Channel MOS FET
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ319STL-E Datenblatt(HTML) 4 Page - Renesas Technology Corp

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2SJ319(L), 2SJ319(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
1
2
3
4
Static Drain to Source on State Resistance
vs. Temperature
VGS = –10 V
Pulse Test
ID = –5 A
–2 A
–1 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
3
2
0.5
1
0.2
0.1
–0.05 –0.1 –0.2
–0.5 –1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
500
200
100
20
50
10
5
di / dt = 50 A /
µs, V
GS = 0
duty
≤ 1 %, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
50
20
10
5
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–500
–400
–300
–200
–100
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
500
200
100
20
50
10
5
–0.1 –0.2
–0.5 –1
–5
–2
–10
–0.05
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
VDD = –50 V
–100 V
–150 V
VDD = –150 V
–100 V
–50 V
VGS = –10 V, VDD = –30 V
PW = 2
µs, duty ≤ 1 %


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