Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ484WYTL-E Datenblatt(PDF) 1 Page - Renesas Technology Corp |
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2SJ484WYTL-E Datenblatt(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.3.00 Sep 07, 2005 page 1 of 6 2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous: ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK ) 1. Gate 2. Drain 3. Source 4. Drain D G S 1 2 3 4 R Note: Marking is “WY”. *UPAK is a trademark of Renesas Technology Corp. |
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