Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3163-E Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SK3163-E Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK3163 Rev.3.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 75 A Drain peak current ID(pulse) Note 1 300 A Body-drain diode reverse drain current IDR 75 A Avalanche current IAP Note 3 50 A Avalanche energy EAR Note 3 214 mJ Channel dissipation Pch Note 2 110 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 1 — 6.0 7.5 m Ω ID = 40 A, VGS = 10 V Note 1 Static drain to source on state resistance RDS(on) — 8.0 12 m Ω ID = 40 A, VGS = 4 V Note 1 Forward transfer admittance |yfs| 50 80 — S ID = 40 A, VDS = 10 V Note 1 Input capacitance Ciss — 7100 — pF Output capacitance Coss — 1000 — pF Reverse transfer capacitance Crss — 280 — pF VDS = 10 V, VGS = 0, f = 1 MHz Total gate charge Qg — 125 — nC Gate to source charge Qgs — 25 — nC Gate to drain charge Qgd — 25 — nC VDD = 25 V, VGS = 10 V, ID = 75 A Turn-on delay time td(on) — 60 — ns Rise time tr — 300 — ns Turn-off delay time td(off) — 520 — ns Fall time tf — 330 — ns VGS = 10 V, ID = 40 A, RL = 0.75 Ω Body–drain diode forward voltage VDF — 1.05 — V IF = 75 A, VGS = 0 Body–drain diode reverse recovery time trr — 90 — ns IF = 75 A, VGS = 0 diF/ dt = 50 A/ µs Note: 1. Pulse test |
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Ähnliche Beschreibung - 2SK3163-E |
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