Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3163-E Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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2SK3163-E Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SK3163 Rev.3.00 Sep 07, 2005 page 3 of 7 Main Characteristics Power vs. Temperature Derating Case Temperature TC (°C) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Drain to Source Voltage VDS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 200 150 100 0 50 100 150 200 0.1 0.3 1 3 10 30 100 100 80 60 40 20 0 24 6 8 10 1000 300 100 30 10 1 0.3 0.1 3 Ta = 25 °C 10 µs 100 µs 1 ms DC Operation (Tc = 25 °C) Operation in this area is limited by RDS(on) PW = 10 ms (1 shot) 3.5 V 3 V 50 VGS = 10 V 5 V 4 V 2.5 V 100 80 60 40 20 0 12 34 5 Tc = –25 °C 25 °C 75 °C VDS = 10 V Pulse Test Pulse Test 0 48 12 16 20 2.0 1.6 1.2 0.8 0.4 Pulse Test ID = 50 A 20 A 10 A 1 20 100 2 100 2 5 1 10 200 20 10 VGS = 4 V 10 V Pulse Test 50 50 5 |
Ähnliche Teilenummer - 2SK3163-E |
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Ähnliche Beschreibung - 2SK3163-E |
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