Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3210L Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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2SK3210L Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page 2SK3210(L), 2SK3210(S) Rev.3.00 Sep. 30, 2004 page 3 of 8 Main Characteristics 160 120 80 40 0 50 100 150 200 300 100 10 0.1 0.3 1 3 10 300 100 50 40 30 20 10 0 2 468 10 50 40 30 20 10 0 12 34 5 0.1 1 VGS = 2.5 V 5 V 25 °C 75 °C 500 0.3 3 30 0.05 30 1000 10 µs 100 µs DC Opera tion Tc = 25 °C) Ta = 25 °C PW = 10 ms(1shot) 4 V 10 V Tc = –25 °C 3 V VDS = 10 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Case Temperature Tc ( °C) Power vs. Temperature Derating 2.0 1.6 1.2 0.8 0.4 0 48 12 16 20 50 100 1 20 2 1000 200 500 100 20 10 50 10 A ID = 20 A 5 A 5 10 VGS = 4 V 10 V Pulse Test Pulse Test Pulse Test Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Operation in this area is limited by RDS(on) |
Ähnliche Teilenummer - 2SK3210L |
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Ähnliche Beschreibung - 2SK3210L |
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