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2SJ506S Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer 2SJ506S
Bauteilbeschribung  Silicon P Channel MOS FET
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ506S Datenblatt(HTML) 3 Page - Renesas Technology Corp

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2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
–20
0
–4
–8
–12
–16
0
–1–2–3–4–5
Tc = –25°C
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
–8 V
–6 V
–3 V
–4.5 V
–3.5 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–200
–20
–50
–100
–0.2
–0.5
–10
–2
–5
–1
–0.1
–0.1–0.2 –0.5 –1 –2
–5 –10 –20
–50
–500
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
µs
100
µs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
0
–0.4
–0.8
–1.2
–1.6
0
–4
–8
–12
–16
–20
Pulse Test
ID = –10 A
–5 A
–2 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
200
100
20
50
10
–2
–20
–50
–1
–10
–5
–100
1000
500
VGS = –4 V
–10 V
Pulse Test
75°C
25°C


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