Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ506S Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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2SJ506S Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SJ506(L), 2SJ506(S) Rev.5.00 Sep 07, 2005 page 3 of 7 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –20 0 –4 –8 –12 –16 0 –4 –8 –12 –16 –20 –20 0 –4 –8 –12 –16 0 –1–2–3–4–5 Tc = –25°C 40 0 10 20 30 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –5 V –4 V –8 V –6 V –3 V –4.5 V –3.5 V VGS = –2.5 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –200 –20 –50 –100 –0.2 –0.5 –10 –2 –5 –1 –0.1 –0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –500 Ta = 25°C PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 1 ms 10 µs 100 µs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 0 –0.4 –0.8 –1.2 –1.6 0 –4 –8 –12 –16 –20 Pulse Test ID = –10 A –5 A –2 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 200 100 20 50 10 –2 –20 –50 –1 –10 –5 –100 1000 500 VGS = –4 V –10 V Pulse Test 75°C 25°C |
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