Datenblatt-Suchmaschine für elektronische Bauteile |
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STU16NC50 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STU16NC50 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STU16NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 250V, ID = 10 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 29 ns tr 21 ns Qg Total Gate Charge VDD = 400V, ID = 20 A, VGS = 10V 95 128 nC Qgs Gate-Source Charge 14.7 nC Qgd Gate-Drain Charge 41.7 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 14 ns tf Fall Time 30 ns tc Cross-over Time 58 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 16 A ISDM (2) Source-drain Current (pulsed) 64 A VSD (1) Forward On Voltage ISD = 18.4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 20 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 480 ns Qrr Reverse Recovery Charge 5 µC IRRM Reverse Recovery Current 21 A Safe Operating Area Thermal Impedance |
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