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STY15NA100 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STY15NA100
Bauteilbeschribung  N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY15NA100 Datenblatt(HTML) 1 Page - STMicroelectronics

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STY15NA100
N - CHANNEL 1000V - 0.65
Ω - 15A - Max247
MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.65
Ω
s
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s
± 30V GATE TO SOURCE VOLTAGE RATING
s
REPETITIVE AVALANCHE TESTED
s
LOW INTRINSIC CAPACITANCE
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max247
TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
RDS(on)
ID
STY15NA100
1000 V
< 0.77
Ω
15 A
April 1998
1
2
3
Max247
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)
1000
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25
oC15
A
ID
Drain Current (continuous) at Tc = 100
oC
9.5
A
IDM(
•)
Drain Current (pulsed)
60
A
Ptot
Total Dissipation at Tc = 25
oC
300
W
Derating Factor
2.4
W/
oC
Tstg
Storage Temperature
-55 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1/5


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